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Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy

M. D. Pashley, K. W. Haberern, J. M. Gaines

Open publisher page 176 citations

Abstract

We report the first scanning tunneling microscope observations of molecular beam epitaxy grown GaAs(001) vicinal surfaces cut 2° towards (111)A and 2° towards (111)B. The A-type step edges are found to be relatively straight, with 16 Å kinks occurring typically every 100 Å along the step. In contrast, the B-type step edges are found to be very ragged. On both surfaces, the terrace widths varied considerably. The details of the two step structures are dominated by the structure of the (2×4) unit cell.

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What this paper is about

We report the first scanning tunneling microscope observations of molecular beam epitaxy grown GaAs(001) vicinal surfaces cut 2° towards (111)A and 2° towards (111)B. The A-type step edges are found to be relatively straight, with 16 Å kinks occurring typically every 100 Å along the step. In contrast, the B-type step edges are found to be very ragged. On both surfaces, the terrace widths varied considerably. The details of the two step structures are dominated by the structure of the (2×4) unit cell.

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Available abstract

We report the first scanning tunneling microscope observations of molecular beam epitaxy grown GaAs(001) vicinal surfaces cut 2° towards (111)A and 2° towards (111)B. The A-type step edges are found to be relatively straight, with 16 Å kinks occurring typically every 100 Å along the step. In contrast, the B-type step edges are found to be very ragged. On both surfaces, the terrace widths varied considerably. The details of the two step structures are dominated by the structure of the (2×4) unit cell.

Key concepts: Vicinal, Scanning tunneling microscope, Molecular beam epitaxy, Terrace (agriculture), Microscopy, Crystallography, Materials science, Epitaxy

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