2003Unpublished venueRequires access

Advanced ECL with new active pull-down emitter-followers

H. Itoh, T. Saitoh, Takazo Yamada, M. Yamamoto, A. Masaki

Open publisher page 19 citations

Abstract

Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.>

About this research paper

What this paper is about

Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.>

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OpenAlex reports 19 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.>

Key concepts: Common emitter, Emitter-coupled logic, Resistor–transistor logic, Logic gate, Electrical engineering, Capacitive sensing, Electronic circuit, Computer science

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