Tomas Page, J.M. Benedetto
Abstract
Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.
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Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.
Key concepts: Static random-access memory, Random access memory, CMOS, Heavy ion, National laboratory, Commercial off-the-shelf, Electrical engineering, Integrated circuit