A new low-voltage CMOS 1-bit full adder for high performance applications
I‐Chyn Wey, Chun-Hua Huang, Hwang‐Cherng Chow
Abstract
I‐Chyn Wey, Chun-Hua Huang, Hwang‐Cherng Chow
Abstract
In this paper, a new low-voltage high-performance CMOS 1-bit full adder circuit is proposed. The new design is derived by combining XOR (XNOR) gates, used in the conventional full adder, and transmission gates. The proposed full adder can provide full voltage swing at a low supply voltage and offers superior performance in both power and speed than the conventional full adder, the transmission full adder, and the low-voltage full adder. Based on the simulation results performed by HSPICE, the new low-voltage design consumes minimal power and has a minimal power-delay product in the TSMC 0.35 /spl mu/m process, as supply voltage varies from 3.3 V to 2 V. Also, the new cell is demonstrated to consume minimal power as adopted in a 4/spl times/4 bit carry-save array adder, and a 4/spl times/4 bit pipelined carry-save array adder.
OpenAlex reports 14 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
In this paper, a new low-voltage high-performance CMOS 1-bit full adder circuit is proposed. The new design is derived by combining XOR (XNOR) gates, used in the conventional full adder, and transmission gates. The proposed full adder can provide full voltage swing at a low supply voltage and offers superior performance in both power and speed than the conventional full adder, the transmission full adder, and the low-voltage full adder. Based on the simulation results performed by HSPICE, the new low-voltage design consumes minimal power and has a minimal power-delay product in the TSMC 0.35 /spl mu/m process, as supply voltage varies from 3.3 V to 2 V. Also, the new cell is demonstrated to consume minimal power as adopted in a 4/spl times/4 bit carry-save array adder, and a 4/spl times/4 bit pipelined carry-save array adder.
Key concepts: Adder, Transmission gate, Serial binary adder, Computer science, CMOS, XNOR gate, Carry-save adder, Power–delay product