2003•Unpublished venueRequires access

A novel low-frequency PIN diode

L. Drozdovskaia

Abstract

This paper describes computer simulation results of a novel multilayer PIN diode suitable for the high-power low-frequency application. On the other hand the use of this diode in the microwave region allows one to decrease the DC reverse bias voltage. The novel diode is composed of p/sup +/ and n/sup +/ semiconductor layers separated by composite intrinsic region n-n/sup -/, forming a p/sup +/-n-n/sup -/-n/sup +/ structure. It may be considered as a PIN diode.

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Available abstract

Key concepts: PIN diode, Diode, Step recovery diode, Optoelectronics, Microwave, Materials science, Backward diode, Power (physics)