2011•Unpublished venueRequires access

Advanced RF characterization of new planar high sensitive zero-bias Schottky diodes

Matthias Hoefle, Andreas Penirschke, Oleg Cojocari, Rolf Jakoby

Abstract

New zero-bias Schottky diodes with low junction capacitance and low differential resistance are characterized by applying DC and S-parameter measurements from 65–110 GHz. Diode versions with short and open circuits at the diode's anode as well as biased measurements of the diode allow an advanced investigation to model the diode's equivalent circuit. The extracted parameters provide an accurate RF model for nonlinear circuit simulations to design and realize diode detectors for direct detection receivers.

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Available abstract

Key concepts: Schottky diode, Diode, Capacitance, Optoelectronics, Step recovery diode, Materials science, Backward diode, Differential capacitance