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2014•IEEE Electron Device LettersRequires access

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

Isik C. Kizilyalli, Andrew P. Edwards, Hui Fan Nie, Phong Bui-Quang, Donald Disney, Dave Bour

Open publisher page 50 citations

Abstract

There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm2with breakdown voltages exceeding 700 V and pulsed (100 μs) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.

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What this paper is about

There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm2with breakdown voltages exceeding 700 V and pulsed (100 μs) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.

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Available abstract

There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm2with breakdown voltages exceeding 700 V and pulsed (100 μs) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.

Key concepts: Diode, Breakdown voltage, Optoelectronics, Gallium nitride, Materials science, Wide-bandgap semiconductor, Voltage, Power electronics

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