2003•Unpublished venueRequires access

Coherent phonons in doped semiconductors probed by THz radiation

G.C. Cho, P.Y. Han, Xicheng Zhang

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Abstract

Summary form only given. We present the highest radiation frequency, observed by far, emitted by coherent longitudinal optical (LO) phonons in III-V compound semiconductors. The results reveal the bare coherent phonon radiation in coexistence with background collective charge carrier oscillations in doped samples. We discuss differences in probing via THz radiation from the optical experiment scheme like time resolved reflectivity change.

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What this paper is about

Summary form only given. We present the highest radiation frequency, observed by far, emitted by coherent longitudinal optical (LO) phonons in III-V compound semiconductors. The results reveal the bare coherent phonon radiation in coexistence with background collective charge carrier oscillations in doped samples. We discuss differences in probing via THz radiation from the optical experiment scheme like time resolved reflectivity change.

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Available abstract

Summary form only given. We present the highest radiation frequency, observed by far, emitted by coherent longitudinal optical (LO) phonons in III-V compound semiconductors. The results reveal the bare coherent phonon radiation in coexistence with background collective charge carrier oscillations in doped samples. We discuss differences in probing via THz radiation from the optical experiment scheme like time resolved reflectivity change.

Key concepts: Terahertz radiation, Phonon, Semiconductor, Physics, Radiation, Doping, Optoelectronics, Optics

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