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1987•IEEE Transactions on Electron DevicesRequires access

Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET's

Hiroshi Mizuta, Ken Yamaguchi, Satoshi Takahashi

Open publisher page 67 citations

Abstract

The surface potential effect on gate-drain avalanche breakdown in GaAs MESFET's is investigated with a two-dimensional device simulator. It is shown that the surface potential effect changes the potential distribution in GaAs MESFET's drastically and therefore plays an important role in determining drain breakdown voltage. In addition, two device structures producing high breakdown voltages, an offset gate structure and a recessed gate structure, are analyzed.

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What this paper is about

The surface potential effect on gate-drain avalanche breakdown in GaAs MESFET's is investigated with a two-dimensional device simulator. It is shown that the surface potential effect changes the potential distribution in GaAs MESFET's drastically and therefore plays an important role in determining drain breakdown voltage. In addition, two device structures producing high breakdown voltages, an offset gate structure and a recessed gate structure, are analyzed.

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OpenAlex reports 67 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The surface potential effect on gate-drain avalanche breakdown in GaAs MESFET's is investigated with a two-dimensional device simulator. It is shown that the surface potential effect changes the potential distribution in GaAs MESFET's drastically and therefore plays an important role in determining drain breakdown voltage. In addition, two device structures producing high breakdown voltages, an offset gate structure and a recessed gate structure, are analyzed.

Key concepts: MESFET, Breakdown voltage, Optoelectronics, Avalanche breakdown, Time-dependent gate oxide breakdown, Materials science, Avalanche diode, Gallium arsenide

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