Properties and composition of anodic oxide layers of indium antimonide

In recent years a number of optoelectronic devices based on narrowgap semiconductors of the AIIIBV type have been developed. One of the factors preventing widespread production of such devices is the inadequate study of the effect of the technology on the properties of insulator-semiconductor systems, of which anodic oxide films (AOF)--indium antimonide--are most promising. In this work the authors studied the dielectric properties and chemical composition of indium antimonide AOF as a function of their thicknesses and conditions of formation. It is determined that anodic indium antimonide oxide layers 90-110nm thick have high dielectric properties. It is also determined that an increase of the film thickness above 80100nm is accompanied by a decrease in the relative antimony content. The ratio of indium and antimony in oxide layers depends on the electrical conditions of oxidation of the semiconductor: the relative antimony content increases as a result of a decrease in the field intensity under conditions of constant voltage.