An improved anodic oxide insulator for InP metal-insulated-semiconductor field-effect transistors

Highly insulation oxide layers have been anodically grown on InP. The oxide was grown in an electrolyte of pH<2.5 which causes In203 to dissolve out of the growing oxide layer, resulting in a P2O5/In2O3 ratio larger than one. The increase in oxide resistivity is attributed to the high concentration of P2O5 in the layers, since the P2O5 has a large band gap.