Behaviour of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures

This paper presents the behavior of Graded Channel SOI Gate-All-Around (GAA) nMOSFET at high temperatures in the range of 27°C to 300°C. Threshold voltage, subthreshold slope, maximum transconductance, zero temperature coefficient and Early voltage were investigated through three-dimensional simulations and electrical characterization. It was verified that when temperature increases, threshold voltage decreases, subthreshold slope increases and did not suffer any degradation with the LLD/L ratio increase. The maximum transconductance decreases when temperature increases, and increases for larger LLD/L ratios, and Early voltage decreases almost linearly with temperature increase. The results show the excellent behavior of GC SOI GAA nMOSFET at high temperatures compared to conventional SOI GAA devices.