1987•European Solid-State Device Research ConferenceRequires access

A 18 μm 2 cell for Megabit CMOS EPROM

E. Camerlenghi, P. Caprara, G. Crisenza

Abstract

A process technology for realzizng highly compact EPROM devices has been described; in particular the structure and the electrical characterization of a 18 μm2 memory cell has been reported, pointing out good speed performances together with good manufacturability qualities. This technology has beein verified using 64K memory, and at present it is utilized to manufacture a 1Mbit memory.

About this research paper

What this paper is about

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Megabit, EPROM, Design for manufacturability, CMOS, Non-volatile memory, Memory cell, Computer science, Random access memory