Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS

This paper presents a study upon implementation of a nonvolatile memory with a standard CMOS process. The main emphasis is to obtain an analog, continuous value, EEPROM module. The accuracy, reliability and reproducibility performance of the different memory cells have been investigated. Different types of programming method have been tested and compared EEPROM cells have been processed with two different 0.35 μm CMOS processes and two different process runs. Measurement results show that a reliable, medium accuracy, analog EEPROM can be implemented without any process Modifications.