ScholarLens Back to search
1993•Defense Technical Information Center (DTIC)Requires access

First Results on InGaAsP Separate Confinement Heterostructure Diode Lasers

M. Razeghi

Open publisher page 0 citations

Abstract

The first attempts of fabrication of InGaAsP/GaAs SCH-QW laser structures allowed to obtain laser diodes with threshold current densities as low as 47OA/sq cm and differential efficiencies as high as 0.7W/A. Long-cavity (L approx. 1mm) laser diodes have low series resistances of 0.1-0.4ohms. These diodes are suitable for testing of the properties of the Al-free material in continuous wave regime. At the same time, it is evident that further optimization of structure parameters is necessary to reach the ultimate performance expected for InGaAsP SCH QW lasers.

About this research paper

What this paper is about

The first attempts of fabrication of InGaAsP/GaAs SCH-QW laser structures allowed to obtain laser diodes with threshold current densities as low as 47OA/sq cm and differential efficiencies as high as 0.7W/A. Long-cavity (L approx. 1mm) laser diodes have low series resistances of 0.1-0.4ohms. These diodes are suitable for testing of the properties of the Al-free material in continuous wave regime. At the same time, it is evident that further optimization of structure parameters is necessary to reach the ultimate performance expected for InGaAsP SCH QW lasers.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The first attempts of fabrication of InGaAsP/GaAs SCH-QW laser structures allowed to obtain laser diodes with threshold current densities as low as 47OA/sq cm and differential efficiencies as high as 0.7W/A. Long-cavity (L approx. 1mm) laser diodes have low series resistances of 0.1-0.4ohms. These diodes are suitable for testing of the properties of the Al-free material in continuous wave regime. At the same time, it is evident that further optimization of structure parameters is necessary to reach the ultimate performance expected for InGaAsP SCH QW lasers.

Key concepts: Diode, Laser, Optoelectronics, Materials science, Semiconductor laser theory, Gallium arsenide, Fabrication, Heterojunction

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
First Results on InGaAsP Separate Confinement Heterostructure Diode Lasers — Research Paper | ScholarLens