1987•Applied Physics LettersRequires access

Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser

U. Koren, B.I. Miller, Ying Su, Thomas Koch, John E. Bowers

Abstract

The structure and properties of a high performance InGaAs/InGaAsP separate confinement heterostructure multiple quantum well laser operating at 1.54 μm are described. The laser has low threshold current (18 mA), high quantum efficiency (22% facet), high cw output power (42 mW/facet), and weak dependence of the threshold currents and efficiencies on cavity length.

About this research paper

What this paper is about

Why it matters

OpenAlex reports 84 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Heterojunction, Optoelectronics, Facet (psychology), Materials science, Laser, Gallium arsenide, Quantum well, Quantum efficiency