Niobium and Niobium Nitride Contacts on Semiconducting Material.

This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated-circuit structure, which can function from the superconducting-temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high-temperature post processing. These materials provide a low-resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures.