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1979•IEEE Transactions on Components Hybrids and Manufacturing TechnologyRequires access

Ohmic Noble Metal Contacts to Semiconducting Oxides

Bernd Hoffmann, J.L. Gentner

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Abstract

Noble metals deposited on semiconducting BaTiO3form blocking contacts. An ohmic behavior is obtained, if an intermediate layer of highly conducting In2O3is inserted between the semiconductor and the metal. Aging of the latter contact is observed at various temperatures up to 973 K. The lower contact resistance of the system with an In2O3layer is explained by the removal of oxygen being adsorbed at the surface of the semiconductor and a consequent elimination of a depletion layer.

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What this paper is about

Noble metals deposited on semiconducting BaTiO3form blocking contacts. An ohmic behavior is obtained, if an intermediate layer of highly conducting In2O3is inserted between the semiconductor and the metal. Aging of the latter contact is observed at various temperatures up to 973 K. The lower contact resistance of the system with an In2O3layer is explained by the removal of oxygen being adsorbed at the surface of the semiconductor and a consequent elimination of a depletion layer.

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Available abstract

Noble metals deposited on semiconducting BaTiO3form blocking contacts. An ohmic behavior is obtained, if an intermediate layer of highly conducting In2O3is inserted between the semiconductor and the metal. Aging of the latter contact is observed at various temperatures up to 973 K. The lower contact resistance of the system with an In2O3layer is explained by the removal of oxygen being adsorbed at the surface of the semiconductor and a consequent elimination of a depletion layer.

Key concepts: Ohmic contact, Metal, Layer (electronics), Semiconductor, Materials science, Stereochemistry, Chemistry, Nanotechnology

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