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2013•European Microwave ConferenceRequires access

Planar zero bias schottky diode detector operating in the E- and W-band

Michael Hrobak, Michael Sterns, Marcus Schramm, Wadim Stein, Lorenz-Peter Schmidt

Open publisher page 20 citations

Abstract

Schottky diode detectors are the method of choice for many scalar power measurement applications in the millimeter wave frequency range. Power monitoring of forward and backward travelling waves is especially important within signal generator frequency extension modules and front end modules of semiconductor automatic test systems (ATS). We present the synthesis and characterisation of a planar zero bias Schottky diode (ZBD) detector that covers an input frequency range of 60 GHz to 110 GHz. The planar design is based on thin-film processed Al2O3 substrate. The utilized gallium arsenide (GaAs) diodes are commercially available from Virginia Diodes, Inc. (VDI). The presented measurement data is compared to results from 3D electromagnetic field (EM) and nonlinear circuit simulations.

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What this paper is about

Schottky diode detectors are the method of choice for many scalar power measurement applications in the millimeter wave frequency range. Power monitoring of forward and backward travelling waves is especially important within signal generator frequency extension modules and front end modules of semiconductor automatic test systems (ATS). We present the synthesis and characterisation of a planar zero bias Schottky diode (ZBD) detector that covers an input frequency range of 60 GHz to 110 GHz. The planar design is based on thin-film processed Al2O3 substrate. The utilized gallium arsenide (GaAs) diodes are commercially available from Virginia Diodes, Inc. (VDI). The presented measurement data is compared to results from 3D electromagnetic field (EM) and nonlinear circuit simulations.

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Available abstract

Schottky diode detectors are the method of choice for many scalar power measurement applications in the millimeter wave frequency range. Power monitoring of forward and backward travelling waves is especially important within signal generator frequency extension modules and front end modules of semiconductor automatic test systems (ATS). We present the synthesis and characterisation of a planar zero bias Schottky diode (ZBD) detector that covers an input frequency range of 60 GHz to 110 GHz. The planar design is based on thin-film processed Al2O3 substrate. The utilized gallium arsenide (GaAs) diodes are commercially available from Virginia Diodes, Inc. (VDI). The presented measurement data is compared to results from 3D electromagnetic field (EM) and nonlinear circuit simulations.

Key concepts: Schottky diode, Gallium arsenide, Optoelectronics, Detector, Planar, Step recovery diode, Diode, Schottky barrier

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