1995•University of Twente Research InformationRequires access
Fast transient ESD simulation of the NMOS protection transistor
J.R.M. Luchies, K. Verhaege, F.G. Kuper, A.J. Mouthaan, H.C. de Graaff
Open publisher page 10 citations
Abstract
The protective properties of NMOS transistors for the Charged Device Model have been investigated. With 2D device simulation it is shown that the base transition time is the limiting factor for CDM NMOS transistor protection. An improved compact transistor model accounting for intrinsic base resistance is presented.