2002•Unpublished venueRequires access

Near threshold regime in quantum well lasers

A. Lopes Ribeiro, Carlos A. F. Fernandes

Abstract

A simulation model for the study of the near threshold regime in multiple quantum well (MQW) distributed feedback (DFB) lasers is presented. Allowing the calculation of the carrier confinement, the radiation confinement, the current density and the modal gain for several MQW laser configurations, the method seems to be a powerful tool for the optimization of the laser performance. Results are presented for the 1.3 /spl mu/m InP/InGaAsP laser.

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Key concepts: Laser, Quantum dot laser, Optoelectronics, Quantum well, Semiconductor laser theory, Materials science, Distributed feedback laser, Quantum