Nonlinear stability of quantum dot semiconductor lasers
Thomas Erneux, Evgeny A. Viktorov, P. Mandel
Abstract
Thomas Erneux, Evgeny A. Viktorov, P. Mandel
Abstract
There remain a number of critical issues involving dynamical stability properties of semiconductor lasers even though lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. In summary, QD lasers exhibit a two-stage recovery for low intensities that increase their stability compared to QW lasers.
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There remain a number of critical issues involving dynamical stability properties of semiconductor lasers even though lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. In summary, QD lasers exhibit a two-stage recovery for low intensities that increase their stability compared to QW lasers.
Key concepts: Quantum dot laser, Wetting layer, Semiconductor laser theory, Laser, Quantum dot, Optoelectronics, Quantum well, Semiconductor