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2004•Unpublished venueRequires access

Analytical explanation of different RF characteristics exhibited with common-emitter and common-base bipolar transistors

Ningyue Jiang, Guogong Wang, Zhenqiang Ma

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Abstract

For the first time, the differences of RF characteristics exhibited by bipolar transistors between common-emitter and common-base configurations, under different stability conditions, are analytically elucidated. The analyses are verified with measured results from SiGe heterojunction bipolar transistors. These analyses markedly advocate that different configurations should be used at different amplification frequencies in order to maximize the RF performance potential of bipolar transistors.

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What this paper is about

For the first time, the differences of RF characteristics exhibited by bipolar transistors between common-emitter and common-base configurations, under different stability conditions, are analytically elucidated. The analyses are verified with measured results from SiGe heterojunction bipolar transistors. These analyses markedly advocate that different configurations should be used at different amplification frequencies in order to maximize the RF performance potential of bipolar transistors.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

For the first time, the differences of RF characteristics exhibited by bipolar transistors between common-emitter and common-base configurations, under different stability conditions, are analytically elucidated. The analyses are verified with measured results from SiGe heterojunction bipolar transistors. These analyses markedly advocate that different configurations should be used at different amplification frequencies in order to maximize the RF performance potential of bipolar transistors.

Key concepts: Bipolar junction transistor, Common emitter, Heterostructure-emitter bipolar transistor, Heterojunction bipolar transistor, Transistor, Optoelectronics, Materials science, Bipolar transistor biasing

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