P. Ashburn
Abstract
This chapter contains sections titled: Introduction Bandgap Engineering Collector Current, Base Current and Gain Enhancement Cut-off Frequency Device Design Trade-offs in a SiGe HBT Graded Germanium Profiles Boron Diffusion in SiGe HBTs Strain Relaxation and Strain Compensated Si1−x−yGexCy References
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This chapter contains sections titled: Introduction Bandgap Engineering Collector Current, Base Current and Gain Enhancement Cut-off Frequency Device Design Trade-offs in a SiGe HBT Graded Germanium Profiles Boron Diffusion in SiGe HBTs Strain Relaxation and Strain Compensated Si1−x−yGexCy References
Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Germanium, Silicon-germanium, Optoelectronics, Materials science, Heterojunction, Heterostructure-emitter bipolar transistor