Investigation of Ion Implantation into High Purity and Controllably Doped Silicon and into Gallium Arsenide.

Analytical analysis of the data derived from the use of Rutherford backscattering-channelling measurements of disorder production in ion implanted semiconductors for the determination of damage production mechanisms. The redistribution and lattice incorporation of implanted impurities in Si during controlled furnace annealing to reorder the implantation damaged Si. The production of disorder in InP by light and heavy ion implantation as a function of implant flux and fluence and implant temperature. Investigation, in parallel with (3) of the damage creation and annealing processes associated with the interaction of the RBS/channelling analysis ion probe with heavy ion implantation damage in InP.