Guohui Li, Wei Han, Yan Luo, Dejun Han, Ji Chengzhou
Abstract
This paper reports the application of ion implantation in planar GaAs device fabrication, including Si ion implantation to create high quality channels, O and H ion implantation to produce device isolation, and MeV Si and O ion implantation to form internal links.
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This paper reports the application of ion implantation in planar GaAs device fabrication, including Si ion implantation to create high quality channels, O and H ion implantation to produce device isolation, and MeV Si and O ion implantation to form internal links.
Key concepts: Ion implantation, Materials science, Fabrication, Optoelectronics, Ion, Planar, Gallium arsenide, Silicon