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Deep levels in ion-implanted GaAs (gallium arsenide). Final report, 1 June-1 October 1985

Harry B. Dietrich, Richard Magno

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Abstract

In summary, DLTS measurements have not found any majority-carrier traps with a concentration greater than 1 x 10/sup 13//cm/sup 3/ after annealing an implanted sample at 850 C. The implanted and annealed samples were found to have the same minority-carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.

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In summary, DLTS measurements have not found any majority-carrier traps with a concentration greater than 1 x 10/sup 13//cm/sup 3/ after annealing an implanted sample at 850 C. The implanted and annealed samples were found to have the same minority-carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.

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Available abstract

In summary, DLTS measurements have not found any majority-carrier traps with a concentration greater than 1 x 10/sup 13//cm/sup 3/ after annealing an implanted sample at 850 C. The implanted and annealed samples were found to have the same minority-carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.

Key concepts: Annealing (glass), Gallium arsenide, Materials science, Ion implantation, Ion, Analytical Chemistry (journal), Spectral line, Control sample

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Deep levels in ion-implanted GaAs (gallium arsenide). Final report, 1 June-1 October 1985 — Research Paper | ScholarLens