Design of a 1.12 Gb/s 11.3 mW low-voltage differential signaling transmitter

This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18 μ m mixed signal complementary metal-oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling (LVDS) technique. A multiplexer (MUX) and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14 : 1 MUX and an adjustable LVDS driver circuit, capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560 μ m 2 , demonstrating low power consumption and adjustable driving capability.