Electrical Conductivity of S$m_2O_3-ZrO_2$ Systems

Electrical conductivities of systems containing 10, 20, 30, 40, and 50 mol% of have been measured as a function of temperature and of oxygen partial pressure at temperature from 500 to 1000 and oxygen partial pressures from 1 atm. Plots of log conductivity vs. 1/T are found to be linear with an inflection point at around 650 and the temperature dependence of conductivity shows two different defect structures. The conductivities are increased with increasing pressure, slowing a p-type character. The electrical conductivity dependences on are found to be at 650∼1000 and at 500∼650, respectively, The defect structures are Oi at 650-1000 and ' at 500-650. The electron hole is main carrier type, however ionic contribution is found at low temperature portion. Ionic contributions increased with the increasing amount of dopant. In 60mol% system, the conductivity is increased with decreasing oxygen pressure.