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Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry

GG Sweeney, TR Alvarez

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Abstract

Silicon wafers, implanted with As or BF2, were subjected to isochronal anneals and the resulting impurity profiles were measured with both spreading resistance probe (SRP) and secondary ion mass spectrometry (SIMS). The two measurements converged as the anneal temperature was increased. This is to be expected as SRP measures the electrically active impurity concentration, while SIMS measures the atomic concentration of the impurity present. An anomalous kink in the BF2 profile observed in SIMS measurements was not present in the SRP measurement. Junction depths measured by SRP were consistently shallower than measurements made by SIMS. The SRP and SIMS profiles were compared to those profiles simulated with SUPREM, a process modeling computer program.

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What this paper is about

Silicon wafers, implanted with As or BF2, were subjected to isochronal anneals and the resulting impurity profiles were measured with both spreading resistance probe (SRP) and secondary ion mass spectrometry (SIMS). The two measurements converged as the anneal temperature was increased. This is to be expected as SRP measures the electrically active impurity concentration, while SIMS measures the atomic concentration of the impurity present. An anomalous kink in the BF2 profile observed in SIMS measurements was not present in the SRP measurement. Junction depths measured by SRP were consistently shallower than measurements made by SIMS. The SRP and SIMS profiles were compared to those profiles simulated with SUPREM, a process modeling computer program.

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Available abstract

Silicon wafers, implanted with As or BF2, were subjected to isochronal anneals and the resulting impurity profiles were measured with both spreading resistance probe (SRP) and secondary ion mass spectrometry (SIMS). The two measurements converged as the anneal temperature was increased. This is to be expected as SRP measures the electrically active impurity concentration, while SIMS measures the atomic concentration of the impurity present. An anomalous kink in the BF2 profile observed in SIMS measurements was not present in the SRP measurement. Junction depths measured by SRP were consistently shallower than measurements made by SIMS. The SRP and SIMS profiles were compared to those profiles simulated with SUPREM, a process modeling computer program.

Key concepts: Impurity, Secondary ion mass spectrometry, Spreading resistance profiling, Wafer, Silicon, Analytical Chemistry (journal), Materials science, Ion

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