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2015•Chemistry LettersRequires access

An N2-compatible Ni0 Metal–Organic Chemical Vapor Deposition (MOCVD) Precursor

Viet-Ha Tran, Takeshi Yatabe, Takahiro Matsumoto, Hidetaka Nakai, Kazuharu Suzuki, Takao Enomoto, Seiji Ogo

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Abstract

Abstract We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal–organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.

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What this paper is about

Abstract We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal–organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.

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Available abstract

Abstract We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal–organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.

Key concepts: Metalorganic vapour phase epitaxy, Chemistry, Chemical vapor deposition, Metal, Deposition (geology), Inorganic chemistry, Nickel, Chemical engineering

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