High k Gate Dielectrics

Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory of defects in high-k materials Bonding constraints and defect formation at Si/high-k interfaces Band alignment calculations Electron mobility at the Si/high-k interface Model for defect generation during electrical stress Technological aspects Device integration issues Device concepts for sub-100 nm CMOS technologies Transistor characteristics Nonvolatile memories based on high-k ferroelectric layers