Extended Surface Bands Enabled Lasing Emission and Wavelength Switch from Sulfur Quantum Dots

Abstract The development of a lasing wavelength switch, particularly from a single inorganic gain material, is challenging but highly demanded for advanced photonics. Nonetheless, all current lasing emission of inorganic gain materials arises from band‐edge states, and the inherent fixed bandgap limitation of the band‐edge system leads to the inaccessibility of lasing wavelength switching from a single inorganic gain material. Here the realization of a single inorganic gain material‐based lasing wavelength switch is reported by proposing an alternative lasing emission strategy, that is, lasing emission from surface gain. Previous efforts to achieve surface‐gain‐enabled lasing emission have been hindered by the limited gain volume provided by surface states due to the broad emission bandwidth and/or low emission efficiency. This challenge is overcome by introducing extended surface bands onto the surface of sulfur quantum dots. The extended surface bands contribute to a high photoluminescence quantum yield and narrow emission bandwidth, thereby providing sufficient gain volume and facilitating stimulated emission. When combined with whispering gallery mode microcavity, surface gain enabled lasing emission manifests an ultralow threshold of 8.3 µJ cm −2 . Remarkably, the reconfigurable perturbation to surface gain, facilitated by molecular affinity, allows for the realization of the lasing wavelength switch from a single inorganic gain material.