Emitter-Coupled Logic Circuits Implemented with Heterojunction Bipolar Transistors
P.M. Asbeck, Debra L. Miller, R.J. Anderson, F. H. Eisen
Abstract
P.M. Asbeck, Debra L. Miller, R.J. Anderson, F. H. Eisen
Abstract
This paper describes the first experimental demonstration of ECL circuits using (Ga,Al)As/GaAs heterojunction bipolar transistors. Ringoscillators were fabricated which exhibited propagation delay times as low as 185 ps, with devices fabricated on the basis of 2 μm design rules. Potential advantages of GaAs ECL circuits, their fabrication technology and their expected future performance are also discussed.
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This paper describes the first experimental demonstration of ECL circuits using (Ga,Al)As/GaAs heterojunction bipolar transistors. Ringoscillators were fabricated which exhibited propagation delay times as low as 185 ps, with devices fabricated on the basis of 2 μm design rules. Potential advantages of GaAs ECL circuits, their fabrication technology and their expected future performance are also discussed.
Key concepts: Emitter-coupled logic, Bipolar junction transistor, Electronic circuit, Resistor–transistor logic, Materials science, Fabrication, Heterostructure-emitter bipolar transistor, Optoelectronics