2023•Proceedings of Tomsk State University of Control Systems and RadioelectronicsOpen access
Study of the characteristics of a distributed gain amplifier based on GaAs field-effect transistors
Nikita I. Gogolev, Ayatulla Salikh, Dmitry S. Bragin, Vladimir D. Dmitriev
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Abstract
The distributed amplifier is an effective solution for creating broadband amplifiers in wireless communication, pulse and measurement technology. In this study, a distributed amplification amplifier based on GaAs field-effect transistors was developed. The optimal number of amplification cells was determined and a cascaded distributed amplification amplifier with a schematic diagram operating in the range of 2 to 20 GHz was designed. Preliminary calculations of the main characteristics of the amplifier were also performed, and based on them, a model of the distributed amplification amplifier was constructed, which was simulated in CAD. The changes in the gain and output power when compressed by 1 dB depending on the number of amplification cells were analyzed. The results of the study can be used in designing distributed amplification amplifiers for various systems in modern radio electronics.
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