A Stacked SiC Half-Bridge Power Module with Comprehensive Optimization of Parasitic Capacitance and Parasitic Inductance

This article introduces a 1200V/36A SiC half-bridge power module with ultra-low parasitic capacitance and low inductance, maintaining excellent switching performance and low conducted EMI. According to the comprehensive comparison results of different power module’s packaging structures, the structure of multi-stacked DBC module is chosen and improved. The parasitic capacitance of the presented module is reduced to less than 1pF by using the shielding theory. The parasitic loop inductance is reduced to 4.5nH by mutual inductance cancellation principle by optimizing the structure and layout of the power module. Compared with the pre-improved module, the experimental results show that the improved multi-stacked DBC structure greatly reduces the switching time, overvoltage, and the common mode current.