A 27.1 dB Gain and 6.85 dB NF Low-Noise Amplifier Based on the Novel Gain-Noise Plane
Zhongchen Xu, Menghu Ni, Qian Xie, Zheng Wang
Abstract
Zhongchen Xu, Menghu Ni, Qian Xie, Zheng Wang
Abstract
This paper presents a 160 GHz cascode low-noise amplifier (LNA) in $0.13 \mu \mathrm{m}$ SiGe BiCMOS with the gain-noise plane approach. The collaborative power gain and noise optimization is performed by analyzing the optimal region of the LNA and the character of the gain-state point on the gain-noise plane. Besides, the optimized stagger-tuned technology is derived theoretically to decrease the in-band noise performance degradation. The proposed cascode LNA achieves a power gain $(G_{p})$ of 27.1 dB, bandwidth of 31 GHz (148-179-GHz), noise figure (NF) of 6.85 dB, input-referred 1dB power compression point (IP1dB) of -23.9 dBm and power consumption of 31.6 mW.
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This paper presents a 160 GHz cascode low-noise amplifier (LNA) in $0.13 \mu \mathrm{m}$ SiGe BiCMOS with the gain-noise plane approach. The collaborative power gain and noise optimization is performed by analyzing the optimal region of the LNA and the character of the gain-state point on the gain-noise plane. Besides, the optimized stagger-tuned technology is derived theoretically to decrease the in-band noise performance degradation. The proposed cascode LNA achieves a power gain $(G_{p})$ of 27.1 dB, bandwidth of 31 GHz (148-179-GHz), noise figure (NF) of 6.85 dB, input-referred 1dB power compression point (IP1dB) of -23.9 dBm and power consumption of 31.6 mW.
Key concepts: Noise figure, Low-noise amplifier, Cascode, Effective input noise temperature, Y-factor, Power gain, Noise temperature, Electrical engineering