Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts

Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance. Herein, we use 2D metallic Fe 3 GeTe 2 (FGT) as an electrode in contact with TMDs semiconductors MX 2 (M = Mo, W; X = S, Se, Te) and investigate the contact properties of FGT/MX 2 based on density functional theory calculations. We demonstrated that FGT/MX 2 presents n-type Schottky contacts, and their n-type Schottky barrier heights are lower than that of the most common bulk metal contacts with MX 2, suggesting that FGT can be used as an efficient metallic electrode for MX 2 . The transitions from n-type Schottky contact to p-type Schottky contact and from Schottky contact to Ohmic contact can be achieved in FGT/MX 2 under the electric field. This work not only illustrates an effective method to modulate the contact types and Schottky barrier heights of FGT/MX 2 contacts but also provides a route for designing the nanodevices based on FGT/MX 2 electrical contacts.