2023•Microelectronics ReliabilityRequires access

A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier

Tanvika Garg, Sumit Kale

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Key concepts: High-electron-mobility transistor, Optoelectronics, Materials science, Transconductance, Gallium nitride, Heterojunction, Transistor, Fabrication

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A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier — Research Paper | ScholarLens