Design of low voltage high output resistance current mirror
M. Anitha, G. Anjaneyulu, Praveena Bai Desavathu, Yarlagadda Mallikharjuna Rao
Abstract
M. Anitha, G. Anjaneyulu, Praveena Bai Desavathu, Yarlagadda Mallikharjuna Rao
Abstract
A current mirror design having high output resistance operating at low supply voltage is proposed in this paper. The low voltage operation is achieved using the flipped voltage follower for current mirroring. The circuit operates at low supply with high swing with low impedance node at its output. As low impedance is one the basic requirement of a current mirror, the flipped voltage follower when used as an input shows reduced impedance. However, the observed output resistance of conventional flipped voltage follower current mirror turns to be around 700K ohm, a low value. So, for its improvement a feedback loop is used at the output of proposed current mirror. This improves the output resistance significantly without deteriorating the other performances like bandwidth to a value of 401M ohm. The proposed current mirror results in input impedance in hundreds of ohms around 330 ohm and bandwidth of 2.4GHz comparatively higher than its conventional design. The complete design is carried out using 180 nanometer-based MOS transistors and the circuit runs at 0.5 volt of dual polarity.
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A current mirror design having high output resistance operating at low supply voltage is proposed in this paper. The low voltage operation is achieved using the flipped voltage follower for current mirroring. The circuit operates at low supply with high swing with low impedance node at its output. As low impedance is one the basic requirement of a current mirror, the flipped voltage follower when used as an input shows reduced impedance. However, the observed output resistance of conventional flipped voltage follower current mirror turns to be around 700K ohm, a low value. So, for its improvement a feedback loop is used at the output of proposed current mirror. This improves the output resistance significantly without deteriorating the other performances like bandwidth to a value of 401M ohm. The proposed current mirror results in input impedance in hundreds of ohms around 330 ohm and bandwidth of 2.4GHz comparatively higher than its conventional design. The complete design is carried out using 180 nanometer-based MOS transistors and the circuit runs at 0.5 volt of dual polarity.
Key concepts: Current mirror, Ohm, Output impedance, Buffer amplifier, Electrical engineering, Electrical impedance, Voltage, High impedance