A Study of Semiconductor Lasers/Amplifiers with Multiple Quantum Wells of Different Widths
Ching‐Fuh Lin, Bor-Lin Lee
Abstract
Ching‐Fuh Lin, Bor-Lin Lee
Abstract
It is well known that semiconductor lasers fabricated on the quantum-well structure has much better performance than those fabricated on the heterostructure. Multiple quantum wells are usually used because a higher differential gain coefficient can be obtained by increasing the well number [1]. Conventional multiple quantum wells for the semiconductor lasers have the same width. This wok reports that multiple quantum wells of different widths could lead to semiconductor lasers/amplifiers with very different characteristics.
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It is well known that semiconductor lasers fabricated on the quantum-well structure has much better performance than those fabricated on the heterostructure. Multiple quantum wells are usually used because a higher differential gain coefficient can be obtained by increasing the well number [1]. Conventional multiple quantum wells for the semiconductor lasers have the same width. This wok reports that multiple quantum wells of different widths could lead to semiconductor lasers/amplifiers with very different characteristics.
Key concepts: Quantum well, Semiconductor laser theory, Laser, Optoelectronics, Semiconductor, Semiconductor optical gain, Quantum dot laser, Materials science