2023IEEE Transactions on Plasma ScienceRequires access

Partial Discharge Characteristics of Biaxially Oriented Polypropylene Film Under Nanosecond Pulse Voltage With High Rise Rate

Yan Mi, Yong Chen, Canhui Liu, Yakui Zhu, Ruijin Liao

Open publisher page 10 citations

Abstract

Film capacitors are used as the key energy storage device for high-power pulse generators, and partial discharge (PD) is an important factor leading to insulation degradation and the failure of film capacitors. To accurately evaluate the effect of the rise rate on PD under nanosecond pulse voltage, experiments on the PD characteristics of biaxially oriented polypropylene (BOPP) films under high rise rate (18.3–140 V/ns) nanosecond pulse voltages were carried out. The PDs were mostly concentrated in the rising and falling phases of the nanosecond pulse. Moreover, the repetitive PD inception voltage (RPDIV) first increased and then remained unchanged as the rise time increased, and the PD amplitude and the number of discharges in the rising phase of the nanosecond pulse increased as the rise rate increased, while the discharge time lag decreased gradually. The PD amplitude, the number of discharges, and the discharge time lag in the falling phase of the nanosecond pulse all increased as the rise rate increased. In addition, when the rise rate was less than 50 V/ns, the PD statistical characteristics changed rapidly as the rise rate increased, and when the rise rate was greater than 50 V/ns, the PD statistical characteristics gradually changed more slowly as the rise rate increased.

About this research paper

What this paper is about

Film capacitors are used as the key energy storage device for high-power pulse generators, and partial discharge (PD) is an important factor leading to insulation degradation and the failure of film capacitors. To accurately evaluate the effect of the rise rate on PD under nanosecond pulse voltage, experiments on the PD characteristics of biaxially oriented polypropylene (BOPP) films under high rise rate (18.3–140 V/ns) nanosecond pulse voltages were carried out. The PDs were mostly concentrated in the rising and falling phases of the nanosecond pulse. Moreover, the repetitive PD inception voltage (RPDIV) first increased and then remained unchanged as the rise time increased, and the PD amplitude and the number of discharges in the rising phase of the nanosecond pulse increased as the rise rate increased, while the discharge time lag decreased gradually. The PD amplitude, the number of discharges, and the discharge time lag in the falling phase of the nanosecond pulse all increased as the rise rate increased. In addition, when the rise rate was less than 50 V/ns, the PD statistical characteristics changed rapidly as the rise rate increased, and when the rise rate was greater than 50 V/ns, the PD statistical characteristics gradually changed more slowly as the rise rate increased.

Why it matters

OpenAlex reports 10 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Film capacitors are used as the key energy storage device for high-power pulse generators, and partial discharge (PD) is an important factor leading to insulation degradation and the failure of film capacitors. To accurately evaluate the effect of the rise rate on PD under nanosecond pulse voltage, experiments on the PD characteristics of biaxially oriented polypropylene (BOPP) films under high rise rate (18.3–140 V/ns) nanosecond pulse voltages were carried out. The PDs were mostly concentrated in the rising and falling phases of the nanosecond pulse. Moreover, the repetitive PD inception voltage (RPDIV) first increased and then remained unchanged as the rise time increased, and the PD amplitude and the number of discharges in the rising phase of the nanosecond pulse increased as the rise rate increased, while the discharge time lag decreased gradually. The PD amplitude, the number of discharges, and the discharge time lag in the falling phase of the nanosecond pulse all increased as the rise rate increased. In addition, when the rise rate was less than 50 V/ns, the PD statistical characteristics changed rapidly as the rise rate increased, and when the rise rate was greater than 50 V/ns, the PD statistical characteristics gradually changed more slowly as the rise rate increased.

Key concepts: Nanosecond, Rise time, Materials science, Capacitor, Partial discharge, Voltage, Pulse (music), Amplitude

Related papers

Back to paper searchBrowse research topicsOriginal source
Partial Discharge Characteristics of Biaxially Oriented Polypropylene Film Under Nanosecond Pulse Voltage With High Rise Rate — Research Paper | ScholarLens