Insulating state in open quantum dots and quantum dot arrays
Fuding Ge, C. Prasad, A. Andresen, F. Bird, D. K. FERRY, L.‐H. Lin, Nobuyuki Aoki, Keitaro Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano
Abstract
Fuding Ge, C. Prasad, A. Andresen, F. Bird, D. K. FERRY, L.‐H. Lin, Nobuyuki Aoki, Keitaro Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano
Abstract
Abstract We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split‐gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50 e 2 / h .
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Abstract We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split‐gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50 e 2 / h .
Key concepts: Quantum dot, Mesoscopic physics, Heterojunction, Quantum point contact, Gate voltage, Condensed matter physics, Physics, Quantum dot laser