THz photoconductivity dynamics of semiconductors from sub-nanosecond to millisecond timescales
Edward Butler‐Caddle, I.Y. Khrushchev, Sophie L. Pain, Nicholas E. Grant, John D. Murphy, James Lloyd‐Hughes
Abstract
Edward Butler‐Caddle, I.Y. Khrushchev, Sophie L. Pain, Nicholas E. Grant, John D. Murphy, James Lloyd‐Hughes
Abstract
The pump-probe delay in optical pump, terahertz probe (OPTP) spectroscopy (time-resolved THz spectroscopy) is typically varied using a mechanical delay stage, which limits the delay range to a few nanoseconds. Here we demonstrate an inexpensive modification to typical OPTP setups that extends the range of pump-probe delays to beyond millisecond timescales, whilst retaining the sub-nanosecond resolution required to resolve faster processes that are often present at early times after pulsed optical excitation. We used this new method to investigate the photoconductance dynamics in a range of materials including IIIV semiconductors, metal halide perovskites, germanium and silicon, whose carrier lifetimes range from a few nanoseconds to milliseconds.
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The pump-probe delay in optical pump, terahertz probe (OPTP) spectroscopy (time-resolved THz spectroscopy) is typically varied using a mechanical delay stage, which limits the delay range to a few nanoseconds. Here we demonstrate an inexpensive modification to typical OPTP setups that extends the range of pump-probe delays to beyond millisecond timescales, whilst retaining the sub-nanosecond resolution required to resolve faster processes that are often present at early times after pulsed optical excitation. We used this new method to investigate the photoconductance dynamics in a range of materials including IIIV semiconductors, metal halide perovskites, germanium and silicon, whose carrier lifetimes range from a few nanoseconds to milliseconds.
Key concepts: Nanosecond, Millisecond, Materials science, Photoconductivity, Optoelectronics, Semiconductor, Spectroscopy, Silicon