Femtosecond‐Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere
Reina Miyagawa, Kenzo Goto, Osamu Eryu
Abstract
Reina Miyagawa, Kenzo Goto, Osamu Eryu
Abstract
The authors propose a new technique for forming periodic nitride structures on sapphire substrates. These fine structures were formed only by femtosecond-laser irradiation in N2 ambient. Higher count values of nitrogen ions (CN-) were detected by TOF-SIMS, which demonstrates that nitrogenrelated bonds were formed.
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The authors propose a new technique for forming periodic nitride structures on sapphire substrates. These fine structures were formed only by femtosecond-laser irradiation in N2 ambient. Higher count values of nitrogen ions (CN-) were detected by TOF-SIMS, which demonstrates that nitrogenrelated bonds were formed.
Key concepts: Sapphire, Femtosecond, Irradiation, Materials science, Laser, Atmosphere (unit), Nitrogen, Ion