2010arXiv (Cornell University)Open access

Energy and Effective Mass Dependence of Electron Tunnelling Through\n Multiple Quantum barriers in Different Heterostructures

Jatindranath Gain, Madhumita Sarkar, Sudakshina Kundu

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Abstract

Tunneling of electrons through the barriers in heterostructures has been\nstudied, within unified transfer matrix approach. The effect of barrier width\non the transmission coefficient of the electrons has been investigated for\ndifferent pairs of semi conducting materials that are gaining much importance\nrecently. These pairs include CdS/CdSe, AlGaAs/GaAs and InAs/AlSb. Barrier\ndimensions have been reduced from 20nm to 5nm to observe the effect of scaling\non tunneling properties. Material depended is highlighted for electrons with\nenergy varying from below the barrier height to above it. The electron\neffective mass inside the barrier and the well are often different. The results\nshow that the coupling effect leads to significant changes on the transmission\neffect. . The effective-mass dependant transmission coefficient has been\nplotted with respect to electron energy. The computation is based on the\ntransfer matrix method by using MATLAB.\n

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Tunneling of electrons through the barriers in heterostructures has been\nstudied, within unified transfer matrix approach. The effect of barrier width\non the transmission coefficient of the electrons has been investigated for\ndifferent pairs of semi conducting materials that are gaining much importance\nrecently. These pairs include CdS/CdSe, AlGaAs/GaAs and InAs/AlSb. Barrier\ndimensions have been reduced from 20nm to 5nm to observe the effect of scaling\non tunneling properties. Material depended is highlighted for electrons with\nenergy varying from below the barrier height to above it. The electron\neffective mass inside the barrier and the well are often different. The results\nshow that the coupling effect leads to significant changes on the transmission\neffect. . The effective-mass dependant transmission coefficient has been\nplotted with respect to electron energy. The computation is based on the\ntransfer matrix method by using MATLAB.\n

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Available abstract

Tunneling of electrons through the barriers in heterostructures has been\nstudied, within unified transfer matrix approach. The effect of barrier width\non the transmission coefficient of the electrons has been investigated for\ndifferent pairs of semi conducting materials that are gaining much importance\nrecently. These pairs include CdS/CdSe, AlGaAs/GaAs and InAs/AlSb. Barrier\ndimensions have been reduced from 20nm to 5nm to observe the effect of scaling\non tunneling properties. Material depended is highlighted for electrons with\nenergy varying from below the barrier height to above it. The electron\neffective mass inside the barrier and the well are often different. The results\nshow that the coupling effect leads to significant changes on the transmission\neffect. . The effective-mass dependant transmission coefficient has been\nplotted with respect to electron energy. The computation is based on the\ntransfer matrix method by using MATLAB.\n

Key concepts: Quantum tunnelling, Transmission coefficient, Effective mass (spring–mass system), Electron, Heterojunction, Rectangular potential barrier, Transfer-matrix method (optics), Condensed matter physics

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