2022•Journal of Power ElectronicsRequires access

Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions

Tong An, Yanzhong Tian, Fei Qin, Yanwei Dai, Yanpeng Gong, Pei Chen

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Key concepts: Junction temperature, Insulated-gate bipolar transistor, Power cycling, Materials science, Bipolar junction transistor, Pulse-width modulation, Test bench, Power semiconductor device

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Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions — Research Paper | ScholarLens