2013•International Journal of Circuit Theory and ApplicationsRequires access

Untitled research work

Author information unavailable

Open publisher page 0 citations

Abstract

A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable-gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6-µm BiCMOS silicon technology than that in the 0.35-µm BiCMOS silicon-germanium technology because of the much better stability of the silicon implementation.

About this research paper

What this paper is about

A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable-gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6-µm BiCMOS silicon technology than that in the 0.35-µm BiCMOS silicon-germanium technology because of the much better stability of the silicon implementation.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable-gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6-µm BiCMOS silicon technology than that in the 0.35-µm BiCMOS silicon-germanium technology because of the much better stability of the silicon implementation.

Key concepts: Transimpedance amplifier, BiCMOS, Bipolar junction transistor, Silicon, Amplifier, Silicon-germanium, Operational amplifier, Electrical engineering

Related papers

Back to paper searchBrowse research topicsOriginal source
Untitled research work — Research Paper | ScholarLens