2012Japanese Journal of Applied PhysicsRequires access

Fourier Transform Infrared Spectroscopy of Low-kDielectric Material on Patterned Wafers

Jeffrey Lam, Hao Tan, Maggie Yamin Huang, Fan Zhang, Handong Sun, Zexiang Shen, Zhihong Mai

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Abstract

With many of research on Fourier transform IR (FTIR) on low- k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low- k dielectric thin film properties on patterned wafers. FTIR spectra on low- k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CH x band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low- k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low- k material studies on patterned wafer.

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What this paper is about

With many of research on Fourier transform IR (FTIR) on low- k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low- k dielectric thin film properties on patterned wafers. FTIR spectra on low- k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CH x band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low- k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low- k material studies on patterned wafer.

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Available abstract

With many of research on Fourier transform IR (FTIR) on low- k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low- k dielectric thin film properties on patterned wafers. FTIR spectra on low- k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CH x band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low- k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low- k material studies on patterned wafer.

Key concepts: Fourier transform infrared spectroscopy, Attenuated total reflection, Wafer, Fourier transform spectroscopy, Materials science, Dielectric, Analytical Chemistry (journal), Infrared

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