1998•Crystal Research and TechnologyRequires access
Polycrystalline Synthesis and Single Crystal Growth of AgGaS2
Beijun Zhao, Shifu Zhu, Fengliang Yu, Hongyu Li, De-You Gao, Zhenghui Li
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Abstract
A modified two temperature vapor transport procedure has been used to synthesize AgGaS2 polycrystalline materials at 1060 °C from high-purity Ag, Ga, S elements. The results showed that the polycrystalline materials are pure single phase AgGaS2 by X-ray powder diffraction analysis. The polycrystalline ingot includes a few interior voids and has a high mass density. The AgGaS2 ingot with 12 mm in diameter and 20 mm in length has been grown by the modified Bridgman technique in two-zone vertical furnace. As-grown AgGaS2 ingot was characterized by the X-ray diffraction technique, obtained the rocking curve of the crystal (011) face, it is shown that the ingot is AgGaS2 single crystal. The infrared transparent of the crystal at 2 ∼ 10μm is 49% (and absorption coefficient is 0.74 cm—1).